Gate-tuned spin-orbit interactions in solids

Masashi Shiraishi

doi:10.1117/12.2597048

4 August 2021 Gate-tuned spin-orbit interactions in solids

Masashi Shiraishi

Proceedings Volume 11805, Spintronics XIV; 118052C (2021) https://doi.org/10.1117/12.2597048
Event: SPIE Nanoscience + Engineering, 2021, San Diego, California, United States

Abstract

Gate-tunable spin-orbit interaction (SOI) and its related phenomena have been a new aspects of spintronics and spin-orbitronics. In this presentation, recent progress of gate modulation of the inverse spin Hall effect, its reciprocal effect and spin lifetime anisotropy in solids by a gate electric field will be introduced and discussed.

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Masashi Shiraishi "Gate-tuned spin-orbit interactions in solids", Proc. SPIE 11805, Spintronics XIV, 118052C (4 August 2021); https://doi.org/10.1117/12.2597048

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KEYWORDS

Solids

Anisotropy

Modulation

Spintronics

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