Paper
19 March 1990 Superconducting Bi-Sr-Ca-Cu-O Films Prepared by Laser Ablation
A. Gupta, G. Koren, G. V. Chandrashekhar, A. Segmuller
Author Affiliations +
Proceedings Volume 1187, Processing of Films for High Tc Superconducting Electronics; (1990) https://doi.org/10.1117/12.965155
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
Superconducting thin films of Bi-Sr-Ca-Cu-O have been grown on single crystal (100) SrTiO3 and MgO substrates using laser ablation at 355 nm. Films have been deposited using compositions of 2:2:1:2 (Bi:Sr:Ca:Cu) and 1.86:0.33:1.93:2.06:3.06 (Bi:Pb:Sr:Ca:Cu) to form primarily the low temperature Bi2Sr2CalCu20, and the high temperature Bi2Sr2Ca2Cu3Ox phases, respectively. Films deposited at 760-765°C substrate temperature in the presence of 1 Torr of oxygen show superconducting onset temperatures of 85 K and 110 K, respectively, for the two compositions, with zero resistance obtained at about 70 K in both cases. The zero resistance temperatures for the films can be improved by subsequent annealing of the films at higher temperatures.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Gupta, G. Koren, G. V. Chandrashekhar, and A. Segmuller "Superconducting Bi-Sr-Ca-Cu-O Films Prepared by Laser Ablation", Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); https://doi.org/10.1117/12.965155
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KEYWORDS
Superconductors

Annealing

Oxygen

Laser ablation

Resistance

Lead

Technetium

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