Effects Of Multichamber Processing On Reliability Of Submicron Vias

Takafumi Tokunaga; Nobuo Owada

doi:10.1117/12.963939

15 February 1990 Effects Of Multichamber Processing On Reliability Of Submicron Vias

Takafumi Tokunaga, Nobuo Owada

Proceedings Volume 1188, Multichamber and In-Situ Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963939
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

This paper describes effects of spin-on-glass (SOG) planarization layer etchback process on reliability of submicron vias for multilevel metalization. Resistance values of double-level metal via chains containing 4,000-200,000 vias in the 0.8-2.0 um size range have been measured. Mass spectra for outgas from SOG films have been studied in more detail. The SOG etchback process and the subsequent P-SiO layer deposition process have been executed in a multichamber CVD system. The multichamber processing can reduce the emission of outgas which degrades via yield and reliability.

Citation Download Citation

Takafumi Tokunaga and Nobuo Owada "Effects Of Multichamber Processing On Reliability Of Submicron Vias", Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); https://doi.org/10.1117/12.963939

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