In Situ Planarization Of Dielectric Surfaces Using Boron Oxide

Jeffrey Marks; Kam Law; David Wang

doi:10.1117/12.963940

15 February 1990 In Situ Planarization Of Dielectric Surfaces Using Boron Oxide

Jeffrey Marks, Kam Law, David Wang

Proceedings Volume 1188, Multichamber and In-Situ Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963940
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

A new integrated in situ approach to deposition and planarization of dielectrics is presented. This process uses a multi chamber deposition and etch system. Using plasma enhanced deposition a sacrificial layer or boron oxide is deposited over the dielectric material. Boron oxide is observed to flow as deposited resulting in a planarized surface. After deposition the wafer is transferred under vacuum to the etch chamber where the boron oxide is removed with a 1:1 dielectric to boron oxide etch. This results in a planarized dielectric surface. Effective planarization of 25 micron wide spacings can be achieved using this process.

Citation Download Citation

Jeffrey Marks, Kam Law, and David Wang "In Situ Planarization Of Dielectric Surfaces Using Boron Oxide", Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); https://doi.org/10.1117/12.963940

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available