Paper
24 June 2021 Study on the ablation of layered semiconductor material by femtosecond laser
Kai Wang, ManLou Ye, BaoShan Guo, JingYa Sun
Author Affiliations +
Proceedings Volume 11885, International Conference on Laser, Optics and Optoelectronic Technology (LOPET 2021); 118850G (2021) https://doi.org/10.1117/12.2602419
Event: 2021 International Conference on Laser, Optics and Optoelectronic Technology (LOPET 2021), 2021, Xi'an, China
Abstract
Graphene has emerged excellent electronic, optical and mechanical properties as a layered semiconductor, and opening its bandgap through modulation further expands its practical applications. Direct laser writing has been widely used in material modulation, owing to its high precision, convenient local processing capacity. As an important factor, laser parameters play a crucial role in the ablation of materials. In this paper, the influence of laser parameters on the ablation was investigated by adjusting the energy and numbers of laser pulse. The saturation of ablation was found in the case of 500 pulses, and the ablation threshold of graphene paper was calculated to be 0.2 J/cm2. The results above have a positive effect on the modulation and the further devices fabrication of graphene paper.
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Kai Wang, ManLou Ye, BaoShan Guo, and JingYa Sun "Study on the ablation of layered semiconductor material by femtosecond laser", Proc. SPIE 11885, International Conference on Laser, Optics and Optoelectronic Technology (LOPET 2021), 118850G (24 June 2021); https://doi.org/10.1117/12.2602419
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