Optimization of diffusion bonding process for QPM GaAs crystals

Chenxu Wang; Huizheng Bian; Zhanda Zhu; Yonglin Hui; Hong Lei; Qiang Li

doi:10.1117/12.2602985

31 August 2021 Optimization of diffusion bonding process for QPM GaAs crystals

Chenxu Wang, Huizheng Bian, Zhanda Zhu, Yonglin Hui, Hong Lei, Qiang Li

Proceedings Volume 11907, Sixteenth National Conference on Laser Technology and Optoelectronics; 119071F (2021) https://doi.org/10.1117/12.2602985
Event: Sixteenth National Conference on Laser Technology and Optoelectronics, 2021, Shanghai, China

Abstract

It’s an effective method to produce mid infrared laser that CO₂ laser frequency doubling by using quasi-phase-matched (QPM) crystal. The main problem in the preparing diffusion bonding crystal is controlling the defects. In this paper, the bonding temperature, pressure, time and other parameters are optimized to reduce the interface loss. When the bonding temperature is 700°C , the bonding pressure of 0.27kg/mm², a 49 layer QPM GaAs crystal was fabricated, and the interface loss of the single layer was less than 0.13%. Using the prepared QPM-GaAs crystal for second harmonic generation, 23% SHG efficiency was achieved in a CO₂ laser with 10.56μm wavelength, 219 mJ pulse energy and 110 ns pulse width.

Citation Download Citation

Chenxu Wang, Huizheng Bian, Zhanda Zhu, Yonglin Hui, Hong Lei, and Qiang Li "Optimization of diffusion bonding process for QPM GaAs crystals", Proc. SPIE 11907, Sixteenth National Conference on Laser Technology and Optoelectronics, 119071F (31 August 2021); https://doi.org/10.1117/12.2602985

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