Directional effect and surface features of silicon nitride ceramics by laser spot ablation and microgrooving

Guiying Ma; Xiaoxiao Chen; Yang Liu; Huihui Zhang; Wenwu Zhang

doi:10.1117/12.2603271

31 August 2021 Directional effect and surface features of silicon nitride ceramics by laser spot ablation and microgrooving

Guiying Ma, Xiaoxiao Chen, Yang Liu, Huihui Zhang, Wenwu Zhang

Author Affiliations +

Proceedings Volume 11907, Sixteenth National Conference on Laser Technology and Optoelectronics; 1190735 (2021) https://doi.org/10.1117/12.2603271
Event: Sixteenth National Conference on Laser Technology and Optoelectronics, 2021, Shanghai, China

Abstract

Due to excellent properties such as high hardness, high temperature resistance, corrosion resistance and low thermal conductivity, siliconnitrideceramicsare widely used in aerospace, moldand semiconductor fields. This paper studied the material removal characteristics of fixedpoint laser ablation and microgrooving of silicon nitride ceramics in the cross-coupling energy domain after laser beam splitting and combining. When using nanosecond laser for fixed point ablation, the effect of defocus on the surface characteristics of laser ablation was analyzed. When processing surface microgrooves in different directions, the influence of the directional effect of the spatial characteristics of the coupled energy domain on the processing quality was studied. By test and analysis of the surface morphology characteristics of silicon nitride ceramics, the results show thatthe change of the defocus affects the processing depthwhen a fixed point is ablatedin the cross-coupling energy domain. Thedirection effect of microgroove processing has a more significant effect on the surface characteristics.

Citation Download Citation

Guiying Ma, Xiaoxiao Chen, Yang Liu, Huihui Zhang, and Wenwu Zhang "Directional effect and surface features of silicon nitride ceramics by laser spot ablation and microgrooving", Proc. SPIE 11907, Sixteenth National Conference on Laser Technology and Optoelectronics, 1190735 (31 August 2021); https://doi.org/10.1117/12.2603271

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