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LEDs on a GaN epitaxial wafer grown on a Si substrate were directly bonded on a Si-based circuit board by utilizing via holes. The via holes were etched by deep reactive ion etching (DRIE) on the Si side of the LED wafer. The un-doped GaN in the via holes was further removed by inductively-coupled-plasma reactive ion etching (ICP-RIE). Metal layers were then deposited on the via holes and annealed. We used lead-free solder to bond the n-GaN of LEDs to the n-electrodes on a metal-wire-patterned Si wafer. Characterization in terms of I-V, L-I curves, emission images and spectrum is reported.
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Selvy U. Hepriyadi, Mei-Yun Zhang, Jun-Wei Zhou, Pinghui S. Yeh, "LEDs on a GaN-on-Si wafer stacked with a Si-based circuit board through via holes," Proc. SPIE 12001, Gallium Nitride Materials and Devices XVII, 120010G (5 March 2022); https://doi.org/10.1117/12.2608660