Presentation + Paper
5 March 2022 High-efficiency short-cavity III-V-on-Si C-band DFB laser diodes
J. Rahimi, J. Van Kerrebrouck, B. Haq, J. Bauwelinck, G. Roelkens, G. Morthier
Author Affiliations +
Proceedings Volume 12006, Silicon Photonics XVII; 120060H (2022) https://doi.org/10.1117/12.2607357
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
In this paper, we demonstrate a high-efficiency, short-cavity heterogeneously integrated C-band DFB laser on a Si waveguide realized using adhesive bonding. First, simulation results regarding the integrated cavity design are discussed. In order to decrease the optical loss inside the cavity, we designed a configuration where the optical mode inside the laser cavity is predominantly confined to the Si waveguide underneath. Then, the fabrication technology of the demonstrated device is explained. Finally, we discuss the measured static and dynamic characteristics of the integrated laser. Up to 13% wall plug efficiency is achieved for a 200 μm long DFB laser diode at 20 ⁰C. Up to two times 6 mW of optical power is coupled into the silicon waveguide and more than 44 dB side-mode suppression ratio is obtained. In addition, the dynamic characteristics of the device are demonstrated by non-return-to-zero on-off keying modulation at 20 Gb/s and the transmission over a 2 km long optical fiber.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Rahimi, J. Van Kerrebrouck, B. Haq, J. Bauwelinck, G. Roelkens, and G. Morthier "High-efficiency short-cavity III-V-on-Si C-band DFB laser diodes", Proc. SPIE 12006, Silicon Photonics XVII, 120060H (5 March 2022); https://doi.org/10.1117/12.2607357
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KEYWORDS
Modulation

Silicon

Waveguides

Semiconductor lasers

Etching

Data transmission

Eye

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