In this work, we demonstrate a unique structured carrier injection silicon photonics micro-ring modulator that exhibits a large extinction ratio and a high modulation efficiency. The modulator consists of a ring and a double-bus straight waveguide. The ring has a radius of 7 µm and a 220-nm silicon-on-insulator (SOI) waveguide is used both for the ring and the straight waveguides. The waveguide has a width of 450 nm and a slab thickness of 110 nm with a full silicon height (220 nm) for the contact area. The slab width is 1 µm on both sides from the 450-nm core width and the contact full silicon width is 1.75 µm. The rib ring and the bus waveguides are separated by a gap of 100 nm. The modulator has three doping levels with concentrations of 1018, 1019, and 1020 cm-3 for the core, slab, and the contact areas, respectively. The device is fabricated using the American Institute for Manufacturing Integrated Photonics (AIM Photonics) Multi-Project Wafer (MPW) service. It is tested with a tunable light source that has wavelengths ranging from 1485 nm to 1590 nm. The light is coupled to the modulator using grating couplers. The measured free spectral range of the ring resonator is about 13 nm. The fabricated ring modulator exhibits a large extinction ratio of 21 dB and a high modulation efficiency of 3.7 nm at a direct current (DC) voltage of 1.5 V.
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