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Source mask optimization (SMO) is one of the most widely employed techniques at 7nm technology nodes. As new lithography techniques develop, lithography metrics of SMO used in cost functions (CF) are also developing quickly. Besides the standard critical dimension (CD) and edge placement error metrics, image log-slope (ILS) and ILS-DOF are also significant, which are penalties in SMO CF. A novel contrast-aware SMO is proposed in this paper to improve ILS in current edge placement error (EPE) based SMO flow. The target ILS, an appropriate penalty weight and the cutlines which should be applied the specific process window metric should be adjusted in several SMO iterations. The corresponding mask optimization results based on the qualified SMO model may provide a qualified retargeting strategy at the same time.
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Xiaojing Su, Lisong Dong, Yayi Wei, Yajuan Su, "A novel contrast-aware SMO at 7nm technology node," Proc. SPIE 12052, DTCO and Computational Patterning, 120520H (26 May 2022); https://doi.org/10.1117/12.2614140