Presentation + Paper
25 May 2022 Tone reversal patterning for advanced technology nodes
Author Affiliations +
Abstract
As technology nodes continue to scale down, maintaining roughness and defectivity during the pattern transfer becomes more challenging. For the smallest features, Metal-Organic Resists (MOR) are preferred due to their better selectivity than Chemically Amplified Resists (CAR). However, MORs are usually negative tone resists. Primarily based on defectivity reasons, dark field Extreme Ultraviolet (EUV) masks are strongly preferred over light field EUV masks. Therefore, the MOR resist is more suited for pillar patterning than hole patterning. The purpose of this paper is to show that exposing pillars with MOR and converting them into holes can yield better roughness and defectivity than patterning holes with CAR directly. A similar comparison is done for the tone reversal of lines and spaces. It is shown that the Local Critical Dimension Uniformity (LCDU) of holes and the Line Edge Roughness (LER) of lines/spaces are well conserved throughout the tone inversion process.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Schleicher, J. Bekaert, A. Thiam, S. Decoster, R. Blanc, F. Lazzarino, J. Garcia Santaclara, G. Rispens, and M. Maslow "Tone reversal patterning for advanced technology nodes", Proc. SPIE 12056, Advanced Etch Technology and Process Integration for Nanopatterning XI, 1205605 (25 May 2022); https://doi.org/10.1117/12.2610941
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KEYWORDS
Etching

Optical lithography

Critical dimension metrology

Inspection

Photomasks

Atomic layer deposition

Line edge roughness

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