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In0.52Al0.48As based top-illuminated APDs with a dual-multiplication layer design is demonstrated. It can deliver high output photocurrent (12.7 mA) with high-responsivity (6.3 A/W) and high single-photon detection efficiency (48% @ 300K) with short jitter (65 ps) under 0.9 Vbr and Geiger-mode operation, respectively.
Yi-Shan Lee andJin-Wei Shi
"High-performances dual M-layers avalanche photodiodes from single-photon detection to high saturation output current", Proc. SPIE 12089, Advanced Photon Counting Techniques XVI, 120890F (30 May 2022); https://doi.org/10.1117/12.2622625
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