Gate-controlled sensing of ammonia by single-layer MoS2 field-effect transistor

N. S. Struchkov; N. P. Nekrasov; A. V. Emelianov; F. T. Tuyakova; I. I. Bobrinetskiy

doi:10.1117/12.2623293

30 January 2022 Gate-controlled sensing of ammonia by single-layer MoS₂ field-effect transistor

N. S. Struchkov, N. P. Nekrasov, A. V. Emelianov, F. T. Tuyakova, I. I. Bobrinetskiy

Proceedings Volume 12157, International Conference on Micro- and Nano-Electronics 2021; 121570Q (2022) https://doi.org/10.1117/12.2623293
Event: International Conference on Micro- and Nano-Electronics 2021, 2021, Zvenigorod, Russian Federation

Abstract

Two-dimensional transition metal dichalcogenides (TMDC) and MoS₂ in particular are promising materials as sensitive layers for gas sensing due to room operation temperature, high sensitivity, low dimensions, vast methods of selectivity alteration, etc. MoS₂ response to toxic gases exposure depends on applied electric field that expands capabilities of resistive detection techniques, therefore, requires in-depth study. We fabricated a back-gated MoS₂ based field-effect transistor (MoS₂-FET) with standard photolithography technique on Si/SiO₂ substrate. AFM microscopy confirmed the single layer nature of MoS₂ flakes by cross-section featuring a thickness of 0.7 nm. Raman spectroscopy revealed A_1g and E¹ _2g modes position at 403.5 cm^-1 and 382 cm^-1 respectively. The mobility in the absence of passivation was about 10^-1 cm² V⁻¹s⁻¹. MoS₂-FET exhibits room-temperature NH₃ sensing with resistive response to 200 ppm exposure of about ~60%, signal-to-noise ratio about 8, and response/recovery time about 100 s.

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N. S. Struchkov, N. P. Nekrasov, A. V. Emelianov, F. T. Tuyakova, and I. I. Bobrinetskiy "Gate-controlled sensing of ammonia by single-layer MoS₂ field-effect transistor", Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, 121570Q (30 January 2022); https://doi.org/10.1117/12.2623293

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