Accounting for the body effect in the compact modeling of an “extrinsic” MOSFET drain current in the linear and saturation regimes

V. Turin; R. Shkarlat; V. Poyarkov; O. Kshensky; G. Zebrev; B. Iñiguez; M. Shur

doi:10.1117/12.2624419

30 January 2022 Accounting for the body effect in the compact modeling of an “extrinsic” MOSFET drain current in the linear and saturation regimes

V. Turin, R. Shkarlat, V. Poyarkov, O. Kshensky, G. Zebrev, B. Iñiguez, M. Shur

Author Affiliations +

Proceedings Volume 12157, International Conference on Micro- and Nano-Electronics 2021; 121570V (2022) https://doi.org/10.1117/12.2624419
Event: International Conference on Micro- and Nano-Electronics 2021, 2021, Zvenigorod, Russian Federation

Abstract

We use a linear approximation for the threshold voltage dependence on the body bias to derive the equation for the equivalent output resistance of the “extrinsic” MOSFET in the saturation regime. Previously we derived an equation for the equivalent output resistance of the “extrinsic” MOSFET in the saturation regime, that is based on the “intrinsic” transistor finite output resistance in the saturation regime. But we did not account for the body effect, i.e., the threshold voltage dependence on the body bias applied between the source and the fourth (body) MOSFET terminal. For the earlier generations of MOSFETs, the theory predicts that threshold voltage is a sublinear function of the body bias. However, modern transistors with steep retrograde body doping profiles exhibit an approximately linear relationship between a threshold voltage and a body bias, which allowed us to include the body effect into the compact model of an “extrinsic MOSFET. In addition, we discuss the application of our results to the theory of a common-source amplifier with an NMOS transistor with source degeneration.

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V. Turin, R. Shkarlat, V. Poyarkov, O. Kshensky, G. Zebrev, B. Iñiguez, and M. Shur "Accounting for the body effect in the compact modeling of an “extrinsic” MOSFET drain current in the linear and saturation regimes", Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, 121570V (30 January 2022); https://doi.org/10.1117/12.2624419

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KEYWORDS

Field effect transistors

Resistance

Transistors

Amplifiers

Doping

Resistors

Semiconductors

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