Paper
30 January 2022 AFM study of the MoS2 thin films deposited by magnetron sputtering growth initial stage
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Proceedings Volume 12157, International Conference on Micro- and Nano-Electronics 2021; 121571G (2022) https://doi.org/10.1117/12.2622386
Event: International Conference on Micro- and Nano-Electronics 2021, 2021, Zvenigorod, Russian Federation
Abstract
Molybdenum disulfide (MoS2) thin films with a thickness of about 3.5 nm to 11.5 nm on Si (111) and sapphire (0001) substrates were prepared by the stoichiometric MoS2 target (99.9% purity) magnetron sputtering. The structure formation features of the thin films were studied by preparing samples under the same deposition conditions and different deposition times 10, 20, and 30 s. Atomic force microscopy (AFM) was used to study the thin film samples' morphological features and revealed various mechanisms of films structure formation on Si and sapphire substrates. For the thin films samples, the reflection spectra obtained and the values of the optical band gap were determined, which ranged from 1.73 to 1.69 eV.
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A. I. Belikov, K. Z. Phyo, and M. M. Guk "AFM study of the MoS2 thin films deposited by magnetron sputtering growth initial stage", Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, 121571G (30 January 2022); https://doi.org/10.1117/12.2622386
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KEYWORDS
Molybdenum

Silicon

Sapphire

Sputter deposition

Atomic force microscopy

Thin films

Deposition processes

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