Three-level optical Stark effect in semiconductors

Dietmar H. Froehlich; Christian Neumann; B. Uebbing; Robert H. Wille

doi:10.1117/12.18123

1 May 1990 Three-level optical Stark effect in semiconductors

Dietmar H. Froehlich, Christian Neumann, B. Uebbing, Robert H. Wille

Proceedings Volume 1216, Nonlinear Optical Materials and Devices for Photonic Switching; (1990) https://doi.org/10.1117/12.18123
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

The three-level optical Stark effect is due to a dynamical coupling of two excited states by an intense laser field. This effect has been observed on the heavy and light hole excitons in multiple quantum wells (MQW) and the dipole allowed 2 P exciton in Cu20. In this contribution new results on the dipole forbidden but quadrupole allowed 1 S exciton in Cu20 are reported. The experimental results are analyzed in terms of a nonlinear susceptibility which takes into account the dynamical coupling between the excited states to all orders.

Citation Download Citation

Dietmar H. Froehlich, Christian Neumann, B. Uebbing, and Robert H. Wille "Three-level optical Stark effect in semiconductors", Proc. SPIE 1216, Nonlinear Optical Materials and Devices for Photonic Switching, (1 May 1990); https://doi.org/10.1117/12.18123

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