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1 December 2022 Scaling and readiness of underlayers for high-NA EUV lithography
Roberto Fallica, Danilo De Simone, Steven Chen, Muhammad Safdar, Hyo Seon Suh
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Proceedings Volume 12292, International Conference on Extreme Ultraviolet Lithography 2022; 122920V (2022) https://doi.org/10.1117/12.2645864
Event: SPIE Photomask Technology + EUV Lithography, 2022, Monterey, California, United States
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Abstract
With the introduction of high-numerical aperture extreme ultraviolet lithography, the thickness of layers in the lithographic stack will scale owing to reduced depth of focus and etch budget. While several studies have explored the impact of thickness scaling on photoresists, the consequence of thinning down underlayers for extreme ultraviolet (EUV) lithography has been scarcely investigated. In this work we assessed the readiness of nine state-of-the-art underlayers, spin-on and dry deposited, scaled in thickness series down to 4 nm nominal (~3 nm actual). Dose-to-size and exposure latitude changed by less than 5 % when thickness of underlayer was decreased. In summary, most of EUV underlayers investigated in this work showed minimal impact on the physical and chemical properties as well as the patterning performance when scaling in view of high numerical aperture extreme ultraviolet lithography.
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Roberto Fallica, Danilo De Simone, Steven Chen, Muhammad Safdar, and Hyo Seon Suh "Scaling and readiness of underlayers for high-NA EUV lithography", Proc. SPIE 12292, International Conference on Extreme Ultraviolet Lithography 2022, 122920V (1 December 2022); https://doi.org/10.1117/12.2645864
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KEYWORDS
Extreme ultraviolet lithography
Photoresist materials
Extreme ultraviolet
Lithography
Photoresist developing
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