Poster + Paper
27 December 2022 High-output power GaSb-based diode laser with narrow n-type cladding layer
Author Affiliations +
Conference Poster
Abstract
High output power GaSb-based diode lasers are critical component for 2μm laser systems. We compare four structures with different layer thickness combinations to optimize lower cladding layer thickness. Four structures have similar optical confinement factor of active region. As the lower cladding layer thins, the threshold current increases and the series resistance slightly reduces. Among the four structures, laser with 370nm waveguide layer and 1200nm n-type cladding layer functions the best. An output power of 1.21W at 3A is obtained, the threshold current is 0.11A, the series resistance is 0.25Ωthe slope efficiency is 0.42W/A.
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yihang Chen, Yanzhao Yang, Tianfang Wang, Hongguang Yu, Jianmei Shi, Guiming Zhang, Bin Wu, Chengao Yang, Yu Zhang, Yingqiang Xu, and Zhichuan Niu "High-output power GaSb-based diode laser with narrow n-type cladding layer", Proc. SPIE 12311, Semiconductor Lasers and Applications XII, 123110X (27 December 2022); https://doi.org/10.1117/12.2643950
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Cladding

Semiconductor lasers

Quantum wells

Waveguides

Near field optics

Aluminum

Resistance

RELATED CONTENT


Back to Top