Mask modeling in the curvilinear era

Alex Zepka; Ming Yun Chen

doi:10.1117/12.2642161

15 September 2022 Mask modeling in the curvilinear era

Alex Zepka, Ming Yun Chen

Proceedings Volume 12325, Photomask Japan 2022: XXVIII Symposium on Photomask and Next-Generation Lithography Mask Technology; 123250A (2022) https://doi.org/10.1117/12.2642161
Event: Photomask Japan 2022, 2022, Online Only

Abstract

With the use of Inverse Lithography techniques (ILT) becoming more relevant for advanced mask lithography, layouts that rely heavily on curvilinear patterns are increasingly more prevalent. Aside from the substantial increase in data volume, the error budgets in the manufacturing of the smallest printed features have decreased considerably and proximity effects once relegated to noise are now in need of careful correction. The correction of these curvilinear masks must be preceded a mask model and, therefore, it is key to procure a fast and accurate method for predicting the mask distortions. In order to meet this challenge, Synopsys has drawn from its related experience in the OPC space to offer a modeling tool that goes beyond the traditional metrology CD-based methodology by relying on the information along the entire edge of the mask shapes. This contour-based approach is complemented with an Advanced Regression step that provides an additional level of optimization of the model parameters and can substantially improve its prediction accuracy. The result is a practical and precise mask modeling tool with a high level of automation. This paper demonstrates the capabilities of this mask modeling solution to a sample of curvilinear and advanced Manhattan layouts.

Citation Download Citation

Alex Zepka and Ming Yun Chen "Mask modeling in the curvilinear era", Proc. SPIE 12325, Photomask Japan 2022: XXVIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 123250A (15 September 2022); https://doi.org/10.1117/12.2642161

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