Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits

Oluwatobi Olorunsola; Abdulla Said; Solomon Ojo; Hryhorii Stanchu; Grey Abernathy; Sylvester Amoah; Samir Saha; Emmanuel Wangila; Joshua Grant; Sudip Acharya; Yue-Tong Jheng; Guo-En Chang; Baohua Li; Gregory Salamo; Shui-Qing Yu; Wei Du

doi:10.1117/12.2655510

13 March 2023 Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits

Oluwatobi Olorunsola, Abdulla Said, Solomon Ojo, Hryhorii Stanchu, Grey Abernathy, Sylvester Amoah, Samir Saha, Emmanuel Wangila, Joshua Grant, Sudip Acharya, Yue-Tong Jheng, Guo-En Chang, Baohua Li, Gregory Salamo, Shui-Qing Yu, Wei Du

Author Affiliations +

Proceedings Volume 12426, Silicon Photonics XVIII; 124260B (2023) https://doi.org/10.1117/12.2655510
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

As one of two mainstream platforms, photonics integrated circuits (PICs) on Si photonics platform benefits from the mature complementary metal-oxide-semiconductor (CMOS) manufacturing capabilities and allows for the processing of Si-based PICs with ultra-high volume and low cost. Recent studies of SiGeSn materials, which yield true direct bandgap with sufficient Sn incorporation, hold great promise for PICs featuring scalable, cost-effective, and power-efficient. While the exciting developments in bulk devices including lasers, light emitting diodes (LEDs), and photodetector were reported, the quantum wells (QWs) structure and devices have been investigated targeting the dramatically improved and/or novel device performance via variety of quantum confinement effects. In this work, we report the recent progress on SiGeSn QW development. Particularly, the study of MQW laser is presented. Devices with higher optical confinement factors exhibit clear lasing confirmed by the threshold characteristic and the emission spectra below and above threshold. Only spontaneous emission was observed with the thinner cap layer samples. On the other hand, samples with thicker cap layers of 250 and 290 nm exhibit clear lasing at 77 K with thresholds of 214 and 664 kW/cm², respectively. These promising results establish the guidance for the device design and pave the way for the SiGeSn QW devices towards future high-performance PICs on Si platform.

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Citation Download Citation

Oluwatobi Olorunsola, Abdulla Said, Solomon Ojo, Hryhorii Stanchu, Grey Abernathy, Sylvester Amoah, Samir Saha, Emmanuel Wangila, Joshua Grant, Sudip Acharya, Yue-Tong Jheng, Guo-En Chang, Baohua Li, Gregory Salamo, Shui-Qing Yu, and Wei Du "Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits", Proc. SPIE 12426, Silicon Photonics XVIII, 124260B (13 March 2023); https://doi.org/10.1117/12.2655510

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