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The purpose of this paper is to investigate the impact of advanced immersion lithography process for the development of polarization optics at pixel level on CMOS image sensors. In the first part of this paper, we use Bloch formalism to define regimes that depend on the number of propagative Bloch modes within the structure. The presented analysis gives estimations of required features size to operate in NIR and visible range. The second part of this paper present optical characterization of silicon lamellar grating made on 300 mm wafer using advanced immersion lithography. Characterization results are discussed with respect to optical simulations and reconstructed grating profile is compared to patterning features estimated during first part.
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R. Mulin, F. Deneuville, O. Jeannin, M. Boffety, J. Vaillant, "Bloch mode analysis of subwavelength polarizing planar optics," Proc. SPIE 12432, High Contrast Metastructures XII, 1243204 (15 March 2023); https://doi.org/10.1117/12.2646194