Local depth monitoring using scanning electron microscopy and its verification using atomic force microscopy

Inseok Park; JaeHyung Ahn; Donghyun Lee; Souk Kim; Minho Rim; Younghoon Sohn

doi:10.1117/12.2657848

27 April 2023 Local depth monitoring using scanning electron microscopy and its verification using atomic force microscopy

Inseok Park, JaeHyung Ahn, Donghyun Lee, Souk Kim, Minho Rim, Younghoon Sohn

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Proceedings Volume 12496, Metrology, Inspection, and Process Control XXXVII; 124962L (2023) https://doi.org/10.1117/12.2657848
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

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Abstract

In semiconductor industry, depth measurement is usually performed using the optical critical dimension (OCD) metrology, the atomic force microscopy (AFM) and transmission electron microscope (TEM). However, there are some limits in the depth measurements using OCD metrology or AFM. Therefore, this paper presents a new monitoring method for local depth using scanning electron microscopy (SEM) and a feasible verification method using AFM. This paper considers monitoring of local hole depth for the direct contact (DC). First, this paper proposes a depth monitoring index based on gray level (GL) of SEM image. The index includes not only the GL of the hole but also the GL of the background to reduce the effect of the GL inconsistency. Second, this paper verifies the effectiveness of the proposed depth monitoring index using in-FAB AFM. The reliability of the in-FAB AFM measurements as the reference for local depth is verified by TEM.

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Inseok Park, JaeHyung Ahn, Donghyun Lee, Souk Kim, Minho Rim, and Younghoon Sohn "Local depth monitoring using scanning electron microscopy and its verification using atomic force microscopy", Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, 124962L (27 April 2023); https://doi.org/10.1117/12.2657848

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