Fabrication of a hierarchical patterned sapphire substrate for GaN-based light-emitting diodes

Xinxin Fu; Guojun Zha; Junying Hu; Shuping Huang; Yunming Li; Fahui Wang; Minhua Jiang

doi:10.1117/12.2668661

14 February 2023 Fabrication of a hierarchical patterned sapphire substrate for GaN-based light-emitting diodes

Xinxin Fu, Guojun Zha, Junying Hu, Shuping Huang, Yunming Li, Fahui Wang, Minhua Jiang

Proceedings Volume 12589, International Conference on Optical Technology, Semiconductor Materials, and Devices (OTSMD 2022); 125890D (2023) https://doi.org/10.1117/12.2668661
Event: International Conference on Optical Technology, Semiconductor Materials, and Devices (OTSMD 2022), 2022, Longyan, China

Abstract

Microscale or nanoscale patterns with specific structures on sapphire substrate can effectively reduce the dislocation defects of gallium nitride (GaN) material and improve the quality of gallium nitride crystal during the epitaxy growth of GaN-based light-emitting diodes, thus improving the internal quantum efficiency of LED luminescence. Numbers of methods have been used to fabricated patterned sapphire substrate. But most methods remain on the micron scale. In this work, the nickel annealing technique was introduced to fabricate a novel sapphire substrate, Hierarchical Patterned Sapphire Substrate (HPSS), which has typical characteristics of nano sapphire pillars on a Micro-Patterned Sapphire Substrate (MPSS) used for GaN-based Light-Emitting Diodes (LEDs). Nano-pillars with an average feature size of about 110 nm and feature surface density of ⪆2.339×10⁹cm^-2 were obtained on commercial MPSS through this method. This nickel annealing technique provides an extremely simple, cost-effective and universal method to fabricate hierarchical patterns with two-inch wafer-scale. What’s more, the substrates can be not only sapphire but also extended to silicon, quartz and other heat-resisting materials which are widely used in photoelectric devices and micro/nanofabrication, making it a promising method to fabricate patterned substrate for industrial applications.

Citation Download Citation

Xinxin Fu, Guojun Zha, Junying Hu, Shuping Huang, Yunming Li, Fahui Wang, and Minhua Jiang "Fabrication of a hierarchical patterned sapphire substrate for GaN-based light-emitting diodes", Proc. SPIE 12589, International Conference on Optical Technology, Semiconductor Materials, and Devices (OTSMD 2022), 125890D (14 February 2023); https://doi.org/10.1117/12.2668661

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KEYWORDS

Sapphire

Annealing

Gallium nitride

Light emitting diodes

Nanoparticles

Etching

Patterned sapphire substrate

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