Presentation + Paper
4 October 2023 Metadiffuser fabricated by DUV KrF 248nm photolithography for wavefront manipulation
Author Affiliations +
Abstract
This work presents a disordered metadiffuser that can achieve a uniform angular scattering distribution with a numerical aperture (NA) of 0.85 at a working wavelength of λ=532 nm, as demonstrated through simulations using the Gerchberg- Saxton algorithm. Additionally, we demonstrate the capability of the metadiffuser to achieve near diffraction-limit high NA focusing (NA>0.8) through the use of a spatial light modulator and the optical phase conjugation method for wavefront shaping. Finally, we propose a deep ultraviolet (DUV) model-based optical proximity correction (OPC) system that uses optical and photoresist simulations via Hopkins’s partially coherent image formation and fully convolutional networks (FCN). This system enables larger-area device fabrication with DUV lithography while maintaining precise critical dimension (CD) of meta atoms. The proposed OPC system achieves a lithography accuracy with an average ΔCD/CD of 0.235%. These results offer promising implications for the practical application of metadiffusers and the DUV lithography technique in the field of optical devices.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hsuehli Liu, Chunyen Chou, Linchia Huang, Wilson Guo, Peichen Yu, Chunghsuan Huang, and Chaujern Cheng "Metadiffuser fabricated by DUV KrF 248nm photolithography for wavefront manipulation", Proc. SPIE 12646, Metamaterials, Metadevices, and Metasystems 2023, 1264608 (4 October 2023); https://doi.org/10.1117/12.2677996
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KEYWORDS
Optical proximity correction

Photoresist materials

Design and modelling

Wavefronts

Deep ultraviolet

Spatial light modulators

Optical lithography

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