Influence of surface free energy of underlayer on the dissolution of resist film in tetramethylammonium hydroxide (TMAH) aqueous solution

Jiahao Wang; Yukiko Sasaki; Takahiro Kozawa

doi:10.1117/12.2688116

21 November 2023 Influence of surface free energy of underlayer on the dissolution of resist film in tetramethylammonium hydroxide (TMAH) aqueous solution

Jiahao Wang, Yukiko Sasaki, Takahiro Kozawa

Author Affiliations +

Proceedings Volume 12750, International Conference on Extreme Ultraviolet Lithography 2023; 1275014 (2023) https://doi.org/10.1117/12.2688116
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States

Conference Poster

Abstract

Underlayer is applied to suppress the pattern defects and improve the line width roughness (LWR) of photoresist in the extreme ultraviolet (EUV) lithography. The interaction between the underlayer and photoresist plays an important role in the dissolution behavior during the development, especially for the as-formed interfacial layer. In this research, the types of underlayer are changed by the polar and dispersion components of the surface free energy, and the influence of underlayer on the dissolution behavior during the development is revealed by the quartz crystal microbalance (QCM) method. Poly(4-hydroxystyrene) (PHS) is prepared as the photoresist (a dissolution agent). Tetramethylammonium hydroxide (TMAH) aqueous solution is utilized as the developer. The dissolution rate (attenuation rate) of photoresist is depended on the ratio of polar and dispersion component of underlayer. With the increased ratio, the dissolution rate first descends and then rises.

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

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Jiahao Wang, Yukiko Sasaki, and Takahiro Kozawa "Influence of surface free energy of underlayer on the dissolution of resist film in tetramethylammonium hydroxide (TMAH) aqueous solution", Proc. SPIE 12750, International Conference on Extreme Ultraviolet Lithography 2023, 1275014 (21 November 2023); https://doi.org/10.1117/12.2688116

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