Presentation + Paper
21 November 2023 PEC-aware MPC for CD quality improvement
Soeun Shin, Boram Lee, Sukho Lee, Eok bong Kim, Mina Kim, Jin Choi, Sanghee Lee, Yutaro Sato, Ahmad Syukri, Itaru Ono, Yohei Torigoe
Author Affiliations +
Abstract
Extreme Ultraviolet (EUV) mask has Critical Dimension (CD) errors from various kinds of sources. Those errors are controlled for and corrected by proper correction methods such as fogging effect correction (FEC), loading effect correction (LEC), proximity effect correction (PEC), mask process correction (MPC) and so on. The corrections are mostly done independently. For example, conventionally CD nonlinearity has been the scope of mask process correction (MPC) and proximity effect has been that of proximity effect correction (PEC) because the interaction range considered is different from each other. But in order to improve the CD quality, we may need to consider the residual errors of PEC in MPC as well. For this purpose, we evaluated a new MPC method, named PEC-aware MPC, which considers writer's internal PEC for both model optimization and correction.
Conference Presentation
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Soeun Shin, Boram Lee, Sukho Lee, Eok bong Kim, Mina Kim, Jin Choi, Sanghee Lee, Yutaro Sato, Ahmad Syukri, Itaru Ono, and Yohei Torigoe "PEC-aware MPC for CD quality improvement", Proc. SPIE 12751, Photomask Technology 2023, 127510V (21 November 2023); https://doi.org/10.1117/12.2687866
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KEYWORDS
Extreme ultraviolet

Critical dimension metrology

Scattering

Modeling

Mathematical optimization

Algorithm development

Backscatter

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