Paper
17 August 2023 Ultrafast carrier dynamics in metallic Ti2CTx and semiconductor-like Nb4C3Tx MXenes
Bofeng Xue, Jinghao Wang, Guoquan Gao
Author Affiliations +
Proceedings Volume 12757, 3rd International Conference on Laser, Optics, and Optoelectronic Technology (LOPET 2023); 127571E (2023) https://doi.org/10.1117/12.2690457
Event: 3rd International Conference on Laser, Optics and Optoelectronic Technology (LOPET 2023), 2023, Kunming, China
Abstract
MXenes exhibit exceptional optical and plasmonic properties and have been widely used in sensors and optoelectronics. Understanding the charge carrier dynamics is crucial in guiding the design of these applications. In this study, we used transient absorption spectroscopy to investigate the ultrafast carrier dynamics of the metallic Ti2CTx and the semiconductor-like Nb4C3Tx. Although both Ti2CTx and Nb4C3Tx demonstrate surface plasmon (SP) absorption properties, their SP recovery dynamics differ due to the variation in free carrier density and electron-phonon scattering strength. Metallic Ti2CTx has a greater free carrier density nearby the Fermi level, which leads to strong electron-phonon scattering and low thermal conductivity. In contrast, semiconductor-like Nb4C3Tx displays a fast decay of photoinduced bleach (PB) dynamics due to the trapping of hot electrons, followed by hot electron relaxation and recombination. Our findings shed light on the SP properties of both metallic and semiconductor-like MXenes, which have important implications for the preparation of MXenes devices and their application in the field of photothermal and optoelectronic applications.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bofeng Xue, Jinghao Wang, and Guoquan Gao "Ultrafast carrier dynamics in metallic Ti2CTx and semiconductor-like Nb4C3Tx MXenes", Proc. SPIE 12757, 3rd International Conference on Laser, Optics, and Optoelectronic Technology (LOPET 2023), 127571E (17 August 2023); https://doi.org/10.1117/12.2690457
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KEYWORDS
Picosecond phenomena

Niobium

Surface plasmons

Electrons

Semiconductors

Absorption

Carrier dynamics

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