Design of self-driven position-sensitive detector based on PtTe2/n-Si heterojunction

Shanshan Xing; Ruxia Du; Lili Chen; Huiwen Lin; Li Tao

doi:10.1117/12.2686816

6 August 2023 Design of self-driven position-sensitive detector based on PtTe₂/N-Si heterojunction

Shanshan Xing, Ruxia Du, Lili Chen, Huiwen Lin, Li Tao

Proceedings Volume 12781, International Conference on Optoelectronic Information and Functional Materials (OIFM 2023); 127811L (2023) https://doi.org/10.1117/12.2686816
Event: 2023 International Conference on Optoelectronic Information and Functional Materials (OIFM 2023), 2023, Guangzhou, JS, China

Abstract

Position-Sensitive Detector (PSD) is a photodetector that can detect the position of an incident spot, which plays a critical role in motion tracking. PtTe₂ has a tilted Dirac cone with linear dispersion, which makes it a promising candidate for studying novel quantum phenomena and optoelectronics. Herein, a tellurium-vapor transformation approach is utilized for wafer-scale PtTe₂ preparation, and a new and low-cost PSD is fabricated by constructing PtTe₂/n-Si heterojunction. The PtTe₂/n-Si PSD exhibits a small nonlinearity of only 3.9%, indicating good linearity with zero bias and the work area reaches 3 mm by 3 mm. Furthermore, the response speed is less than the millisecond level. Theoretical analysis indicates that the barriers at PtTe₂/n-Si interface and ultra-high conductivity of PtTe₂ cause the lateral spread of photo-carriers. This work demonstrates a universal strategy for low-cost photodetector towards the PSD applications.

Citation Download Citation

Shanshan Xing, Ruxia Du, Lili Chen, Huiwen Lin, and Li Tao "Design of self-driven position-sensitive detector based on PtTe₂/N-Si heterojunction", Proc. SPIE 12781, International Conference on Optoelectronic Information and Functional Materials (OIFM 2023), 127811L (6 August 2023); https://doi.org/10.1117/12.2686816

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