High performance waveguide integrated vertical silicon-based germanium avalanche photodetectors

Linkai Yi; Daoqun Liu; Peng Zhang; Bo Tang; Bin Li; Yan Yang; Wenwu Wang; Zhihua Li

doi:10.1117/12.2689606

16 October 2023 High performance waveguide integrated vertical silicon-based germanium avalanche photodetectors

Linkai Yi, Daoqun Liu, Peng Zhang, Bo Tang, Bin Li, Yan Yang, Wenwu Wang, Zhihua Li

Proceedings Volume 12792, Eighteenth National Conference on Laser Technology and Optoelectronics; 127920N (2023) https://doi.org/10.1117/12.2689606
Event: Eighteenth National Conference on Laser Technology and Optoelectronics, 2023, Shanghai, China

Abstract

To achieve efficient optical communication and optical interconnection, it is necessary to develop and prepare detectors with high gain, low noise, high bandwidth and strong anti-electromagnetic interference. Because III-V materials cannot be integrated with CMOS process line, therefore, avalanche photodiodes (APDs) based on germanium silicon substrates are considered as detectors with large scale integration. Waveguide integrated structure can solve the contradiction between response and bandwidth in surface illuminated structure. Moreover, with germanium as the absorption region, a SACM (separate absorption charge multiplication) structure with silicon as a multiplication region has become a widely used device structure. In this work, a new vertical structure waveguide integrated structure of silicon-based germanium APD is designed with the charge layer on both sides of the germanium absorption layer, and the influence of the thickness of the multiplication layer on the dark current is simulated and tested. It shows that when the width of the multiplication layer increases, the breakdown voltage of the device increases, indicating that the electric field level of the multiplication region is similar to that of different devices at the breakdown voltage, furthermore, the simulation and experimental results are basically consistent. Under the input power of -16.8 dBm for 1310 nm incident light, the bandwidth of the designed vertical structure SACM silicon-based germanium APD can reach 25.7 GHz at 15.7 V bias. The primary responsivity of the device is up to 0.68 A/Wand the gain bandwidth product is up to 247 GHz, showing the great potential of the present Ge/Si APD for the application in future high-speed data transmission systems.

Citation Download Citation

Linkai Yi, Daoqun Liu, Peng Zhang, Bo Tang, Bin Li, Yan Yang, Wenwu Wang, and Zhihua Li "High performance waveguide integrated vertical silicon-based germanium avalanche photodetectors", Proc. SPIE 12792, Eighteenth National Conference on Laser Technology and Optoelectronics, 127920N (16 October 2023); https://doi.org/10.1117/12.2689606

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KEYWORDS

Avalanche photodetectors

Silicon

Germanium

Dark current

Waveguides

Photocurrent

Electric fields

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