Fabrication of GaAs nanometer scale structures by dry etching

Tatsuro Iwabuchi; Chih-Li Chuang; Galina Khitrova; Mial E. Warren; Arturo Chavez-Pirson; Hyatt M. Gibbs; Dror Sarid; Mark J. Gallagher

doi:10.1117/12.20783

1 October 1990 Fabrication of GaAs nanometer scale structures by dry etching

Tatsuro Iwabuchi, Chih-Li Chuang, Galina Khitrova, Mial E. Warren, Arturo Chavez-Pirson, Hyatt M. Gibbs, Dror Sarid, Mark J. Gallagher

Author Affiliations +

Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20783
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

Nanometer-sized features as small as 400Ahave been fabricated in single-quantum-well GaAs/A1GaAs heterostructures for studies of quantum confinement effects in quantum dots. The features have been fabricated by dry-etching techniques using nanometer-sized etch masks by a novel surface deposition of colloidally-suspended spherical particles. SEM was used to examine the feature size.

Citation Download Citation

Tatsuro Iwabuchi, Chih-Li Chuang, Galina Khitrova, Mial E. Warren, Arturo Chavez-Pirson, Hyatt M. Gibbs, Dror Sarid, and Mark J. Gallagher "Fabrication of GaAs nanometer scale structures by dry etching", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20783

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