Bimetallic-catalyst metal-assisted chemical etching for tailored formation of high-aspect-ratio III−V compound semiconductor submicron pillar arrays

Aadit Sharma; Troy A. Hutchins-Delgado; Sami A. Nazib; Erum Jamil; John Nogan; Anthony R. James; Marek Osiński

doi:10.1117/12.3007334

11 March 2024 Bimetallic-catalyst metal-assisted chemical etching for tailored formation of high-aspect-ratio III−V compound semiconductor submicron pillar arrays

Aadit Sharma, Troy A. Hutchins-Delgado, Sami A. Nazib, Erum Jamil, John Nogan, Anthony R. James, Marek Osiński

Author Affiliations +

Proceedings Volume 12880, Physics and Simulation of Optoelectronic Devices XXXII; 128800D (2024) https://doi.org/10.1117/12.3007334
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

High-aspect-ratio micro- and nanostructures play a pivotal role across diverse technological domains, encompassing microelectronics processors, photovoltaic devices, and optoelectronics. The conventional methods of fabricating these structures often involve reactive-ion dry-etch processes utilizing ionized gases or wet chemical-based etching. Recently, the emergence of metal-assisted chemical etching (MacEtch) has showcased significant potential in enabling the creation of nanoscale features with exceptionally high aspect ratios. Nonetheless, the application of MacEtch to quaternary III−V and heteroepitaxial semiconductors remains relatively unexplored. This research introduces a novel approach named inverse-progression metal-assisted chemical etching (I-MacEtch) that centers around the utilization of a bimetallic catalyst, specifically focusing on the utilization of a bimetallic catalyst. This technique is employed to fabricate well-organized arrays of submicron pillars. The study elucidates that precise control over the vertical and lateral etch rate can be attained through the selection of a suitable metal adhesion layer, which improves the overall catalyst work function, thereby facilitating the streamlined fabrication of ordered arrays of InP submicron pillars possessing predefined aspect ratios.

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Aadit Sharma, Troy A. Hutchins-Delgado, Sami A. Nazib, Erum Jamil, John Nogan, Anthony R. James, and Marek Osiński "Bimetallic-catalyst metal-assisted chemical etching for tailored formation of high-aspect-ratio III−V compound semiconductor submicron pillar arrays", Proc. SPIE 12880, Physics and Simulation of Optoelectronic Devices XXXII, 128800D (11 March 2024); https://doi.org/10.1117/12.3007334

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