Frederic Gardes,1 Valerio Vitali,1,2 Thalía Domínguez Buciohttps://orcid.org/0000-0002-3664-1403,1 Hao Liu,1 José Manuel Luque González,3 Francisco Jurado-Romero,3 Alejandro Ortega-Moñux,4 Glenn Churchill,1 James C. Gates,1 James Hillier,5 Nikolaos Kalfagiannis,5 Daniele Melati,6 Ilaria Cristiani,2 Jens H. Schmid,7 Pavel Cheben,7 J. Gonzalo Wangüemert-Pérez,4 Íñigo Molina-Fernández,3 Cosimo Lacava,2 Periklis Petropoulos1
1Univ. of Southampton (United Kingdom) 2Univ. degli Studi di Pavia (Italy) 3Univ. de Málaga (Spain) 4Univ. of Málaga (Spain) 5Nottingham Trent Univ. (United Kingdom) 6Ctr. de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Saclay (France) 7National Research Council Canada (Canada)
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We report the demonstration of an integrated silicon-rich silicon nitride wavelength converter based on the Bragg scattering intermodal four-wave mixing process. This broadband wavelength converter incorporates on-chip mode conversion, multiplexing and de-multiplexing functionalities. The system allows for broadband signal conversion with a 3dB bandwidth exceeding 70 nm.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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Frederic Gardes, Valerio Vitali, Thalía Domínguez Bucio, Hao Liu, José Manuel Luque González, Francisco Jurado-Romero, Alejandro Ortega-Moñux, Glenn Churchill, James C. Gates, James Hillier, Nikolaos Kalfagiannis, Daniele Melati, Ilaria Cristiani, Jens H. Schmid, Pavel Cheben, J. Gonzalo Wangüemert-Pérez, Íñigo Molina-Fernández, Cosimo Lacava, Periklis Petropoulos, "Si-rich silicon nitride for nonlinear signal processing applications," Proc. SPIE 12890, Smart Photonic and Optoelectronic Integrated Circuits 2024, 128900D (8 March 2024); https://doi.org/10.1117/12.3025186