A vertical-junction carrier-injection micro-ring modulator fabricated in AIM Photonics’ quantum FLEX platform

M. Rakib Uddin; Jin Wallner; Amit Dikshit; Yukta Timalsina; Javery Mann; M. Jobayer Hossain; Gerald Leake Jr.; Nicholas M. Fahrenkopf; Christopher Baiocco; David L. Harame

doi:10.1117/12.2692688

12 March 2024 A vertical-junction carrier-injection micro-ring modulator fabricated in AIM Photonics’ quantum FLEX platform

M. Rakib Uddin, Jin Wallner, Amit Dikshit, Yukta Timalsina, Javery Mann, M. Jobayer Hossain, Gerald Leake Jr., Nicholas M. Fahrenkopf, Christopher Baiocco, David L. Harame

Author Affiliations +

Proceedings Volume 12891, Silicon Photonics XIX; 128910I (2024) https://doi.org/10.1117/12.2692688
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

We demonstrate a vertical-junction, carrier-injection, micro-ring modulator that is fabricated using AIM Photonics’ 300 mm Quantum FLEX Platform which shows results with high modulation efficiency and a large ON-OFF ratio. The modulator device includes a ring and a single-bus, straight waveguide. The ring has a radius of 7 μm and a 220 nm silicon-on-insulator (SOI) waveguide is used both for the ring and the straight waveguides with a rib structure of 110-nm slab thickness. The width of the core waveguide is 550 nm for both the ring and the straight waveguides. The slab width between the full-height silicon core and contact area is kept at 1 μm on both sides from the 550-nm core. The coupling gap between the ring and the bus waveguide is designed to be 150 nm. To make the waveguide core vertical junction, the upper half of the core is n-doped and the lower half is p-doped. To have a smooth electrical connectivity between the core and the contact area, three-level doping is applied where the core is doped with the minimum concentration and the contact silicon area is doped with the highest concentration. The modulator is tested with a tunable laser over a 100-nm window extending from 1485 nm to 1585 nm. The light is coupled to the modulator using grating couplers which are used to couple input and output light. The vertical junction shows excellent direct current (DC) I-V characteristics and the modulator performs at high modulation efficiency of about 1.14 nm and a large ON-OFF ratio of about 21 dB at 1.0 V.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

M. Rakib Uddin, Jin Wallner, Amit Dikshit, Yukta Timalsina, Javery Mann, M. Jobayer Hossain, Gerald Leake Jr., Nicholas M. Fahrenkopf, Christopher Baiocco, and David L. Harame "A vertical-junction carrier-injection micro-ring modulator fabricated in AIM Photonics’ quantum FLEX platform", Proc. SPIE 12891, Silicon Photonics XIX, 128910I (12 March 2024); https://doi.org/10.1117/12.2692688

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available