Victor Calado,1 Simon Mathijssen,1 Eelco van Setten,1 Jo Finders,1 Friso Wittebrood,1 Wim Bouman,1 Kaustuve Bhattacharyya,1 Willem op 't Root,1 Elliott McNamara,1 Matthew McLaren1
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The small depth of focus of high-NA EUV systems asks for robust focus metrology and possibly even focus control. Fast optical focus metrology is possible with dedicated focus-sensitive targets that make use of mask-3D effects. It is beneficial to connect this optical focus measurement to the focus behavior of actual device structures. Focus errors of device structures can be determined by measuring Pattern Placement Errors (PPE) with e-beam since a focus error usually lead to a layout-dependent PPE. By using a large field of view SEM we can capture a large variety of pattern layouts in 1 image acquisition. This large pattern variety creates a lot of diversity resulting in a robust “on-device” focus measurement.
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(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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Victor Calado, Simon Mathijssen, Eelco van Setten, Jo Finders, Friso Wittebrood, Wim Bouman, Kaustuve Bhattacharyya, Willem op 't Root, Elliott McNamara, Matthew McLaren, "Focus sensing using placement and CD variation for high NA EUV lithography," Proc. SPIE 12953, Optical and EUV Nanolithography XXXVII, 1295307 (10 April 2024); https://doi.org/10.1117/12.3010835