Simulation insights: can we measure buried gate-all-around features with backscattered electrons?

John S. Villarrubia; Shari Klotzkin; Benjamin Bunday

doi:10.1117/12.3013044

10 April 2024 Simulation insights: can we measure buried gate-all-around features with backscattered electrons?

John S. Villarrubia, Shari Klotzkin, Benjamin Bunday

Proceedings Volume 12955, Metrology, Inspection, and Process Control XXXVIII; 129551H (2024) https://doi.org/10.1117/12.3013044
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

Subsurface structures exhibit contrast in the backscattered electron (BSE) signal of a scanning electron microscope (SEM) if they and the surrounding material have different BSE yields and the electrons are energetic enough to make the round trip. Gate-All-Around (GAA) transistors have gates formed by multiple subsurface nanowires or nanosheets. I will present Monte Carlo simulated BSE images of a virtual GAA transistor viewed from different angles. Simulations quantify the increase of resolution and decrease of contrast with increasing beam energy. They can inform the choice of operating conditions and the assignment of image features to their corresponding structures.

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John S. Villarrubia, Shari Klotzkin, and Benjamin Bunday "Simulation insights: can we measure buried gate-all-around features with backscattered electrons?", Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 129551H (10 April 2024); https://doi.org/10.1117/12.3013044

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KEYWORDS

Monte Carlo methods

Transistors

Gallium arsenide

Optical simulations

Scanning electron microscopy

Electron microscopes

Nanosheets

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