The temperature dependence of build-up time in a QCL emitting in 8µm wavelength range

E. D. Cherotchenko; V. V. Dudelev; I. I. Vrubel; D. A. Mikhailov; D. V. Chistyakov; V. Yu. Mylnikov; S. N. Losev; A. V. Babichev; A. V. Lutetskiy; S. O. Slipchenko; N. A. Pikhtin; A. G. Gladyshev; D. S. Papylev; K. A. Podgaetskiy; A. Yu. Andreev; I. V. Yarotskaya; M. A. Ladugin; A. A. Marmalyuk; I. I. Novikov; V. I. Kuchinskii; L. Ya. Karachinsky; A Yu. Egorov; G. S. Sokolovskii

doi:10.1117/12.3022488

20 June 2024 The temperature dependence of build-up time in a QCL emitting in 8_μm wavelength range

E. D. Cherotchenko, V. V. Dudelev, I. I. Vrubel, D. A. Mikhailov, D. V. Chistyakov, V. Yu. Mylnikov, S. N. Losev, A. V. Babichev, A. V. Lutetskiy, S. O. Slipchenko, N. A. Pikhtin, A. G. Gladyshev, D. S. Papylev, K. A. Podgaetskiy, A. Yu. Andreev, I. V. Yarotskaya, M. A. Ladugin, A. A. Marmalyuk, I. I. Novikov, V. I. Kuchinskii, L. Ya. Karachinsky, A Yu. Egorov, G. S. Sokolovskii

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Proceedings Volume 13002, Semiconductor Lasers and Laser Dynamics XI; 130020G (2024) https://doi.org/10.1117/12.3022488
Event: SPIE Photonics Europe, 2024, Strasbourg, France

Abstract

We present a study of quantum cascade laser dynamical properties accounting for the Joule heating released in the active region. In particular, we study the QCL emitting at 8 μm in the pulsed pumping mode and present experimental measurements, as well as a theoretical description of the QCL build-up time, showing the features appearing due to the Joule heating released inside the active region.

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E. D. Cherotchenko, V. V. Dudelev, I. I. Vrubel, D. A. Mikhailov, D. V. Chistyakov, V. Yu. Mylnikov, S. N. Losev, A. V. Babichev, A. V. Lutetskiy, S. O. Slipchenko, N. A. Pikhtin, A. G. Gladyshev, D. S. Papylev, K. A. Podgaetskiy, A. Yu. Andreev, I. V. Yarotskaya, M. A. Ladugin, A. A. Marmalyuk, I. I. Novikov, V. I. Kuchinskii, L. Ya. Karachinsky, A Yu. Egorov, and G. S. Sokolovskii "The temperature dependence of build-up time in a QCL emitting in 8_μm wavelength range", Proc. SPIE 13002, Semiconductor Lasers and Laser Dynamics XI, 130020G (20 June 2024); https://doi.org/10.1117/12.3022488

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