Presentation + Paper
18 June 2024 Design and simulation of a graphene-on-silicon nitride electro-absorption dual-mode integrated waveguide modulator
Fernando Martín-Romero, Víctor J. Gómez
Author Affiliations +
Abstract
We present the design and simulation of an integrated graphene-on-silicon nitride (GOSiN) dual-mode electroabsorption modulator at λ = 1550 nm. We started from designing GOSiN TE0 and TE1 mode filters with minimum length and insertion losses. Then, we designed a dual-mode modulator that combines both mode filters, tuning the absorption by applying a gate voltage. We show that the (0,0), (0,1), (1,0) and (1,1) logical values can be generated, with modulation depths up to 608-670 dB/cm for the TE0 mode and 228-284 dB/cm for the TE1 mode. Our results improve, to the best of our knowledge, the state of the art in integrated graphene dual-mode modulators, helping to develop efficient mode division multiplexing (MDM) on-chip interconnections.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Fernando Martín-Romero and Víctor J. Gómez "Design and simulation of a graphene-on-silicon nitride electro-absorption dual-mode integrated waveguide modulator", Proc. SPIE 13012, Integrated Photonics Platforms III, 130120A (18 June 2024); https://doi.org/10.1117/12.3016702
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KEYWORDS
Tunable filters

Modulators

Graphene

Waveguides

Design

Absorption

Modulation

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