Presentation + Paper
18 June 2024 Compact 1.31 μm-emission In0.45Ga0.55As/ In0.25Ga0.75As photonic crystal nanoridge laser monolithically grown on 300 mm silicon substrate
Author Affiliations +
Abstract
An ultra-compact 1.31μm-emission photonic crystal (PC) nano-ridge laser directly grown on a silicon substrate without thick buffer layers achieves lasing with a cavity length as small as 50 μm at a remarkably low pumping threshold of 4.42 kW/cm2. This laser exhibits a lasing peak with side-mode suppression ratio of over 17 dB and a linewidth as narrow as 1.47 nm under 22.91 kW/cm2 pulsed pumping.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Z. Ouyang, D. Colucci, E. M. B. Fahmy, A. A. Yimam, J. Van Campenhout, B. Kunert, and D. Van Thourhout "Compact 1.31 μm-emission In0.45Ga0.55As/ In0.25Ga0.75As photonic crystal nanoridge laser monolithically grown on 300 mm silicon substrate", Proc. SPIE 13012, Integrated Photonics Platforms III, 130120D (18 June 2024); https://doi.org/10.1117/12.3016154
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KEYWORDS
Photonic crystals

Laser crystals

Silicon photonics

Quantum wells

Design

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