Growth of (Hg,Cd)Te from Te-rich solutions

Luigi Colombo; Pok-Kai K. Liao

doi:10.1117/12.21706

1 October 1990 Growth of (Hg,Cd)Te from Te-rich solutions

Luigi Colombo, Pok-Kai K. Liao

Proceedings Volume 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors; (1990) https://doi.org/10.1117/12.21706
Event: 1990 Technical Symposium on Optics, Electro-Optics, and Sensors, 1990, Orlando, FL, United States

Abstract

Mercury cadmium telluride has successfully been grown from tellurium rich solutions. Solution growth offers a number of advantages over other thin film and bulk growth techniques, e.g. purification, thin film and bulk growth, low dislocation density, and inexpensive growth equipment. The principal solution growth techniques that have received the most attention for (Hg,Cd)Te so far have been liquid phase epitaxy(LPE), the traveling heater method(THM) and the solid state recrystallization(SSR) process. These techniques have provided very high quality material for various device structures. The solid state recrystallization process, the traveling heater method and liquid phase epitaxy are reviewed and their similarities described.

Citation Download Citation

Luigi Colombo and Pok-Kai K. Liao "Growth of (Hg,Cd)Te from Te-rich solutions", Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); https://doi.org/10.1117/12.21706

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