Photoelectric characteristics of mid-infrared nBn photodetector based on InAs/InAsSb superlattice

Ruiqing Chai; Shengwen Xie; Lili Xie; Qiyang Sun; Jiushuang Zhang; Ruimeng Zhang; Ruiming Chen

doi:10.1117/12.3038953

8 November 2024 Photoelectric characteristics of mid-infrared nBn photodetector based on InAs/InAsSb superlattice

Ruiqing Chai, Shengwen Xie, Lili Xie, Qiyang Sun, Jiushuang Zhang, Ruimeng Zhang, Ruiming Chen

Author Affiliations +

Proceedings Volume 13247, Infrared, Millimeter-Wave, and Terahertz Technologies XI; 132470B (2024) https://doi.org/10.1117/12.3038953
Event: SPIE/COS Photonics Asia, 2024, Nantong, Jiangsu, China

Abstract

The InAs/InAsSb nBn structure detector without Ga (GA-free) has fewer internal defects, and the barrier blocks majority carrier while allowing the normal transport of photogenerated carriers. The unique structure can effectively suppress the generation-composite current generated by SRH, and achieve low dark current at high operating temperature. In this paper, a mid-infrared Ga-free nBn T2SL detector is investigated. The device exhibited 7.43x10^-6 A/cm² under 0.5 V bias at 127 K. At 120K, the detector achieves quantum efficiency values of 56%, exhibits excellent photoelectric performance.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Ruiqing Chai, Shengwen Xie, Lili Xie, Qiyang Sun, Jiushuang Zhang, Ruimeng Zhang, and Ruiming Chen "Photoelectric characteristics of mid-infrared nBn photodetector based on InAs/InAsSb superlattice", Proc. SPIE 13247, Infrared, Millimeter-Wave, and Terahertz Technologies XI, 132470B (8 November 2024); https://doi.org/10.1117/12.3038953

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