Raman spectroscopy of shallow impurities in semiconductor quantum-well structures

Roberto D. Merlin

doi:10.1117/12.22894

1 November 1990 Raman spectroscopy of shallow impurities in semiconductor quantum-well structures

Roberto D. Merlin

Proceedings Volume 1336, Raman and Luminescence Spectroscopies in Technology II; (1990) https://doi.org/10.1117/12.22894
Event: 34th Annual International Technical Symposium on Optical and Optoelectronic Applied Science and Engineering, 1990, San Diego, CA, United States

Abstract

A brief review is given of Raman scattering from bound electrons and holes in semiconductor superlattices. The experiments on Si (donor)-doped and Be (acceptor)-doped GaAs/AlGaAs quantum-well structures include studies of the dependence of the energy levels on the position of the impurity in the well and the well-width, and as a function of temperature, magnetic field and uniaxial stress. The data, showing reasonable agreement with theoretical predictions, reveal most of the expected features of quantum confinement effects on the impurity spectra. An extensive list of references to theoretical and related experimental work is included.

Citation Download Citation

Roberto D. Merlin "Raman spectroscopy of shallow impurities in semiconductor quantum-well structures", Proc. SPIE 1336, Raman and Luminescence Spectroscopies in Technology II, (1 November 1990); https://doi.org/10.1117/12.22894

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