Paper
5 December 2024 Low-loss edge coupler for thin-film lithium niobate based on wafer-scale photolithography
Author Affiliations +
Proceedings Volume 13418, Fifteenth International Conference on Information Optics and Photonics (CIOP 2024); 134181W (2024) https://doi.org/10.1117/12.3048503
Event: 15th International Conference on Information Optics and Photonics (CIOP2024), 2024, Xi’an, China
Abstract
A low-loss LNOI edge coupler fabricated on 4-inch wafer with deep ultraviolet lithography was demonstrated. The coupler was fabricated on LNOI with 600 nm thin-film lithium-niobate by 180nm lithography and ICP etch process. The 600nm thin-film lithium-niobate was etched for three times to achieve the coupler with tri-layer structure and narrow taper tips of below 150 nm. The fiber to chip coupling loss is 0.84 dB and 1.3 dB per facet for TE light at 1550 nm, when coupled with lensed fibers, which have 4 μm and 3.5 μm mode field diameter, respectively. Furthermore, the coupling loss is less than 1 dB per facet in the wavelength range between 1520 to 1560 nm.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Xiaowen Gu, Jie Tang, Jiangping Dai, Chenquan Wang, Guang Qian, Yuechan Kong, Tangsheng Chen, and Tong Zhang "Low-loss edge coupler for thin-film lithium niobate based on wafer-scale photolithography", Proc. SPIE 13418, Fifteenth International Conference on Information Optics and Photonics (CIOP 2024), 134181W (5 December 2024); https://doi.org/10.1117/12.3048503
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KEYWORDS
Waveguides

Thin films

Optical lithography

Lithium niobate

Deep ultraviolet

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