Study on AlGaInAs/AlGaAs quantum well intermixing effects based on SiO2 layer

Weiqian Cheng; Ting Fu; Yufei Wang; Fengxin Dong; Xuyan Zhou; Weiqiao Zhang; Chuanwang Xu; Xiangqian Li; Lijun Ge; Long Liu; Jianping Zhu

doi:10.1117/12.3048624

5 December 2024 Study on AlGaInAs/AlGaAs quantum well intermixing effects based on SiO₂layer

Weiqian Cheng, Ting Fu, Yufei Wang, Fengxin Dong, Xuyan Zhou, Weiqiao Zhang, Chuanwang Xu, Xiangqian Li, Lijun Ge, Long Liu, Jianping Zhu

Author Affiliations +

Proceedings Volume 13418, Fifteenth International Conference on Information Optics and Photonics (CIOP 2024); 1341830 (2024) https://doi.org/10.1117/12.3048624
Event: 15th International Conference on Information Optics and Photonics (CIOP2024), 2024, Xi’an, China

Abstract

Quantum-well intermixing (QWI) technology is considered as an effective methodology to tune the post-growth bandgap energy of semiconductor compound materials, and is widely used in diode lasers and photonic integrated devices, and other fields. In order to improve the resistance to the catastrophic optical damage for 8XX semiconductor lasers based on AlGaInAs/AlGaAs quantum wells, we adopt a method of impurity-free vacancy disordering. Plasma enhanced chemical vapor deposition is used to grow SiO2 layer on the surface of the epi-wafer in the experiment. The influence of dielectric layer thickness, heat treatment temperature and heat treatment time on the QWI effect is explored through the control variable method, and the inhibition effect of oxygen ion bombardment on QWI is also investigated. The Photo-luminescence wavelength blue shift of the sample is 30-40 nm when the sample is covered by 450 nm SiO₂ and subjected to rapid heat treatment under 900°C for 270 s, which can be used as the non-absorbing region of the laser. In addition, in the experiment of suppressing QWI, the laser epitaxy is first bombarded by oxygen ions from 10 s to150s, and then is deposited with 450 nm SiO₂dielectric layer, and finally underwent rapid heat treatment under 875°C for 270s. It’s found that the sample blue shift is 5nm after 150 s bombardment, and the blue shift inhibition effect is good. Therefore, the combination of SiO₂dielectric layer and plasma bombardment can be applied to the preparation of laser transparent window

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Weiqian Cheng, Ting Fu, Yufei Wang, Fengxin Dong, Xuyan Zhou, Weiqiao Zhang, Chuanwang Xu, Xiangqian Li, Lijun Ge, Long Liu, and Jianping Zhu "Study on AlGaInAs/AlGaAs quantum well intermixing effects based on SiO₂layer", Proc. SPIE 13418, Fifteenth International Conference on Information Optics and Photonics (CIOP 2024), 1341830 (5 December 2024); https://doi.org/10.1117/12.3048624

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Quantum wells

Annealing

Diffusion

Silica

Semiconductor lasers

Gallium arsenide

Dielectrics

Show All Keywords

Keywords/Phrases

Search In:

Publication Years