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Transmission Electron Microscopy (TEM) uncertainty can stem from sample preparation, TEM measurement, and sample tilt during imaging, leading to result variations. Since TEM data serves as a reference for optical critical dimension (OCD) setup, reducing TEM uncertainty is essential to enhance OCD measurement accuracy. This work aims to address these challenges by optimizing sample preparation techniques, refining TEM measurement protocols, and minimizing sample tilt effects. By systematically identifying and mitigating sources of uncertainty, we aim to establish more reliable TEM data. The improved accuracy of TEM measurements will, in turn, enhance the precision of OCD setups, leading to more consistent and accurate process control in semiconductor manufacturing. This initiative not only aims to bolster TEM reliability but also to ensure the robustness of OCD measurements, thereby improving overall process quality and yield.
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