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1 November 1990 Dark-field optical microscopy in semiconductor materials: a typical answerable inverse problem
Jean-Pierre Fillard, Paul C. Montgomery, Syamsa Moh Ardisasmita, Pascal Gall-Borrut
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Proceedings Volume 1351, Digital Image Synthesis and Inverse Optics; (1990) https://doi.org/10.1117/12.23630
Event: 34th Annual International Technical Symposium on Optical and Optoelectronic Applied Science and Engineering, 1990, San Diego, CA, United States
Abstract
From the recent developments in Laser Scanning Tomography it appears that dark field microscopy methods make it possible to observe very small microprecipitates which are bound to grow in the bulk of semi conductor materials or epitaxial layers. Improvements in such investigations rely on reducing the effective "sectioning' thickness of the optical observation in order to be able to measure the axial position of the point sources with submicron precision. This is possible owing to the fact that the recorded individual images of the point sources (considered as Point Spread Functions) are separable diffraction patterns. This communication aims at presenting the first attempt to explore this typical reverse problem of "micro ranging". It will be shown using a series of images from precipitates in Indium Phosphide bulk material that numerical interpolation can lead to the relative position of each particle with a convenient precision. Optical perturbations such as spherical aberration and coma are also to be taken into account if the optical system is not already corrected.
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Jean-Pierre Fillard, Paul C. Montgomery, Syamsa Moh Ardisasmita, and Pascal Gall-Borrut "Dark-field optical microscopy in semiconductor materials: a typical answerable inverse problem", Proc. SPIE 1351, Digital Image Synthesis and Inverse Optics, (1 November 1990); https://doi.org/10.1117/12.23630
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KEYWORDS
Inverse problems
Optical microscopy
Semiconductor materials
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