Paper
1 March 1991 High-efficiency UV and blue emitting devices prepared by MOVPE and low-energy electron-beam irradiation treatment
Isamu Akasaki, Hideaki Amano
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Abstract
The room teffiperature stiniulated emission near ultraviolet from ntype GaN film which was grown by MOVPE on a sapphire substrate is observed for the first time. The low energy electron beam irradiation treatment lowers the resistivity of Mgdoped GaN which tends to show p-type conduction and simultaneously enhances blue luminescence efficiency drastically. The pn junction LED shows strong both nearbandedge UV ends sion from nlayer and blue emission from player.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Isamu Akasaki and Hideaki Amano "High-efficiency UV and blue emitting devices prepared by MOVPE and low-energy electron-beam irradiation treatment", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24289
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CITATIONS
Cited by 5 scholarly publications and 12 patents.
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KEYWORDS
Ultraviolet radiation

Gallium nitride

Electron beams

Energy efficiency

Light emitting diodes

Luminescence

Near ultraviolet

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