In-situ investigation of the low-pressure MOCVD growth of III-V compounds using reflectance anisotropy measurements

Bernard Drevillon; Manijeh Razeghi

doi:10.1117/12.24320

1 March 1991 In-situ investigation of the low-pressure MOCVD growth of III-V compounds using reflectance anisotropy measurements

Bernard Drevillon, Manijeh Razeghi

Author Affiliations +

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24320
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Recent in situ applications of reflectance anisotropy (RA) to the study of the growth of 111-V materials by low pressure MOCVD are reviewed. These results illustrate the extreme sensitivity of the RA technique. During heterojunction growth the first 1-2 seconds are dominated by the change of group V species. Over the time scale of several minutes the signal exhibits damped oscillations correlated to the growth rate. An optical model is proposed to account for this behaviour. A difference in the optical anisotropy between growing and non-growing AsH3 stabilized InAs surface is observed. Large reflectance anisotropies during the growth of lattice-mismatched semiconductors are also presented. It is shown that these anisotropies are related to 3-dimensional growth. The beginning of the lattice-mismatched growth is quantitatively described by an optical model based on effective medium theories. More generally RA technique appears a very promising new method for in situ monitoring of epitaxial processes.

Citation Download Citation

Bernard Drevillon and Manijeh Razeghi "In-situ investigation of the low-pressure MOCVD growth of III-V compounds using reflectance anisotropy measurements", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24320

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available