Near-UV laser ablation of doped polymers

Juergen Ihlemann; Matthias Bolle; Klaus Luther; Juergen Troe

doi:10.1117/12.24328

1 March 1991 Near-UV laser ablation of doped polymers

Juergen Ihlemann, Matthias Bolle, Klaus Luther, Juergen Troe

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24328
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Near UV excimer ablation of transparent polymers can be improved or even enabled by doping using organic dyes. Polymethylmethacrylate (PMMA) and polystyrene (PS) have been investigated using both photostable and photoreactive dopants. The best results with regard to etch quality and effectivity have been achieved with 1,3- diphenyltriazene, which supports the ablation process by photoeliminating nitrogen. Etch rates of 50 jim/pulse can be reached at 308 nm and 351 nra. The etch rate does not depend entirely on the low level absorption coefficient of the doped polymer.

Citation Download Citation

Juergen Ihlemann, Matthias Bolle, Klaus Luther, and Juergen Troe "Near-UV laser ablation of doped polymers", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24328

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