Phonons in PbTe and PbTe:Cr strained layers

Mitra Ivanova Baleva; Maia Milcheva Momchilova

doi:10.1117/12.24434

1 March 1991 Phonons in PbTe and PbTe:Cr strained layers

Mitra Ivanova Baleva, Maia Milcheva Momchilova

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24434
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

F IR spectr-a of PhTe and PbTe : Cr f i lra''s have beerL stud ied in the range ''30 ''5C)OO X ray invest igat ions of the f i Im irtci icated st. r-ained layers wjth high-pressure PbTe phases - c3eS- and CsCIt. ype. The frequenc ies of the irafr-ared modes in these h igh -pressure phases wet-c det. errniried from the spectra I depertderLces of the modulus of the d ie Iect. r ir funct ion $ a. nd the d ie lectr ic loss funct. ion IrnC 1 . . . '' ) and tentat ive Ly ass igned by sca I irLg of the corresporLcl ing SrtSe and I C C PbTe frequenc ies.

Citation Download Citation

Mitra Ivanova Baleva and Maia Milcheva Momchilova "Phonons in PbTe and PbTe:Cr strained layers", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24434

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